Analytical modeling of threshold voltages in p-channel Si/SiGe/Si MOS structures
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Solid-State Electronics
سال: 1993
ISSN: 0038-1101
DOI: 10.1016/0038-1101(93)90249-p